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The Latest IR Datasheet PDF

Part No	Application
IRF510	HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
IRF1310N	HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.
ST330C16C0	Phase control thyristor
ST230S08M2	Phase control thyristor
ST1230C16K3L	Phase control thyristor
SD203N04S15PC	Fast recovery diode
ST303S12PFN3L	Inverter grade thyristor
JANTX2N6782	HEXFET power mosfet
IRF9540NL	"HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.117 Ohm, ID = -23A"
SD600N20MC	Standard recovery diode
ST330S12P0	Phase control thyristor
305URA250P4	Standard recovery diode
IRFI820G	"HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A"
300U160AYPD	Standard recovery diode
IRFR9220	"HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A"
SD103N20S20MC	Fast recovery diode
IRF7469	"HEXFET power MOSFET. VDSS = 40V, RDS(on) = 17mOhm @ VGS = 10V, ID = 9.0A"
SD103R10S20MSC	Fast recovery diode
SD253N10S15PV	Fast recovery diode
ST183S04PFN1L	Inverter grade thyristor
72U160PD	Standard recovery diode
ST173S10PFK1	Inverter grade thyristor
SD203N04S15PBC	Fast recovery diode
ST230C12C3L	Phase control thyristor
111RKI40	Phase control thyristor
ST380CH04C0	Phase control thyristor
SD203N12S10MC	Fast recovery diode
SD600N12PC	Standard recovery diode

International Rectifier Datasheets Catalog

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IR Profile

International Rectifier Corporation is a major woldwide supplier of power semiconductors, which convert electrical energy to operate power supplies, motor drives, lighting ballasts, and battery operated equipment. Its patented HEXFET? power MOSFETs and IGBTs make IR the world leader in field effect transistors. IR technological advances improve the performance and energy efficiency of electronic and electrical equipment in automotive, consumer, computer/peripheral, industrial, lighting, telecom, and government/space applications.