Path: okDatasheet > Semiconductor Datasheet > JGD Datasheet > JGD-108

S2G HA18 SS22 1N983A HER607G 1N992B P4KE110C SF16G FR305 HER607 SMAJ110 1N5950C 1N4108 P4KE33A 1N4370C 3EZ7.5D1 SMBJ26CA HER104L P6KE75C P6KE6.8C SMBJ64A ZMM55-B30 SR735 ZMM55-B27 3EZ16D KBP110G SMAJ9.0CA SMBJ7.0C

JGD Datasheets Catalog-108

Part NoManufacturerApplication
HER151G JGD1.5 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V.
ZMM55-C6V8 JGDSurface mount zener diode, 500mW. Nominal zener voltage 6.4-7.2 V. Test current 5 mA. +-5% tolerance.
ES2G JGD2.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 400 V.
HA18 JGD1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 1000V.
SS22 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current 2.0 A.
1N983A JGD0.5W, silicon zener diode. Zener voltage 82V. Test current 1.5mA. +-10% tolerance.
HER607G JGD6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V.
1N992B JGD0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-5% tolerance.
P4KE110C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional.
SF16G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A.
FR305 JGD3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 600V.
HER607 JGD6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 800V.
SMAJ110 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V.
1N5950C JGD1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-2% tolerance.
1N4108 JGD500mW low noise silicon zener diode. Nominal zener voltage 14V.
P4KE33A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V.
1N4370C JGD500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-2% tolerance.
3EZ7.5D1 JGD3 W, silicon zener diode. Nominal voltage 7.5 V, current 100 mA, +-1% tolerance.
SMBJ26CA JGDSurface mount transient voltage suppressor. Breakdown voltage 28.9 V (min), 31.9 V (max). Test current 1.0 mA. Bidirectional.
HER104L JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V.
P6KE75C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 75 V. Bidirectional.
P6KE6.8C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 6.8 V. Bidirectional.
SMBJ64A JGDSurface mount transient voltage suppressor. Breakdown voltage 71.1 V (min), 78.6 V (max). Test current 1.0 mA.
ZMM55-B30 JGDSurface mount zener diode, 500mW. Nominal zener voltage 28-32 V. Test current 5 mA. +-2% tolerance.
SR735 JGDSchottky barrier rectifier (single chip). Max repetitive peak reverse voltage 35 V. Max average forward current 7.5 A.
ZMM55-B27 JGDSurface mount zener diode, 500mW. Nominal zener voltage 25.1-28.9 V. Test current 5 mA. +-2% tolerance.
3EZ16D JGD3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-20% tolerance.
KBP110G JGDSingle-phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V.
SMAJ9.0CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 9.0 V. Bidirectional.
SMBJ7.0C JGDSurface mount transient voltage suppressor. Breakdown voltage 7.78 V (min), 9.51 V (max). Test current 10.0 mA. Bidirectional.

<< 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117