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3EZ110D4 KBU606G P6KE47C SMBJ5917B 2W01G P6KE400A SF13LG HA14 ZMM5244A SMAJ51 3EZ56D5 SMAJ70A KBPC610G P4KE13C 3EZ56D4 1N5949C 3EZ11D1 SMBJ5943B SMAJ58C 1N4736 SMAJ9.0C FR606G KBU1000 ZMM5250B SMBJ13 FS2G P4KE51

JGD Datasheets Catalog-109

Part NoManufacturerApplication
SS12 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current 1.0 A.
RL201G JGDGlass passivated rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 2.0 A.
SMBJ24C JGDSurface mount transient voltage suppressor. Breakdown voltage 26.7 V (min), 32.6 V (max). Test current 1.0 mA. Bidirectional.
3EZ110D4 JGD3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-4% tolerance.
KBU606G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V.
P6KE47C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V. Bidirectional.
SMBJ5917B JGD1.5W silicon surface mount zener diode. Zener voltage 4.7 V. Test current 79.8 mA. +-5% tolerance.
2W01G JGDSingle phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100 V.
P6KE400A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V.
SF13LG JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 1.0 A.
HA14 JGD1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 300V.
ZMM5244A JGDSurface mount zener diode. Nominal zener voltage 14 V. Test current 9.0 mA. +-3% tolerance.
SMAJ51 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V.
3EZ56D5 JGD3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-5% tolerance.
SMAJ70A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 70 V.
KBPC610G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V.
P4KE13C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V. Bidirectional.
3EZ56D4 JGD3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-4% tolerance.
1N5949C JGD1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-2% tolerance.
3EZ11D1 JGD3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-1% tolerance.
SMBJ5943B JGD1.5W silicon surface mount zener diode. Zener voltage 56 V. Test current 6.7 mA. +-5% tolerance.
SMAJ58C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V. Bidirectional.
1N4736 JGD1W zener diode. Nominal zener voltage 6.8V. 10% tolerance.
SMAJ9.0C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 9.0 V. Bidirectional.
FR606G JGD6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V.
KBU1000 JGDSingle phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V.
ZMM5250B JGDSurface mount zener diode. Nominal zener voltage 20 V. Test current 6.2 mA. +-5% tolerance.
SMBJ13 JGDSurface mount transient voltage suppressor. Breakdown voltage 14.4 V (min), 17.6 V (max). Test current 1.0 mA.
FS2G JGD1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 400V.
P4KE51 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V.

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