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C 3EZ82D1 DF10S 1N4126C 3EZ14D1 3EZ15D1 1N5930 MR850 6A6 3EZ140D4 1N5529A P6KE47CA ZMM5236C 2W08G P4KE91C ES1J 1N4755A SMBJ5914A 1N752 S3A FR102L P4KE27A SMAJ54CA 3EZ160D2 1N961A 1N986B SMAJ6.5C 3EZ16D4

JGD Datasheets Catalog-16

Part NoManufacturerApplication
1N5939B JGD1.5 W, silicon zener diode. Zener voltage 39V. Test current 9.6 mA. +-5% tolerance.
1N755 JGD500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. +-10% standard tolerance.
1N5543C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-2% tolerance.
3EZ82D1 JGD3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-1% tolerance.
DF10S JGDSingle phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000 V.
1N4126C JGD500mW low noise silicon zener diode. Nominal zener voltage 51V. 2% tolerance.
3EZ14D1 JGD3 W, silicon zener diode. Nominal voltage 14 V, current 53 mA, +-1% tolerance.
3EZ15D1 JGD3 W, silicon zener diode. Nominal voltage 15 V, current 50 mA, +-1% tolerance.
1N5930 JGD1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-20% tolerance.
MR850 JGD3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 50V.
6A6 JGD6.0 A silicon rectifier. Max recurrent peak reverse voltage 600 V.
3EZ140D4 JGD3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-4% tolerance.
1N5529A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance.
P6KE47CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V. Bidirectional.
ZMM5236C JGDSurface mount zener diode. Nominal zener voltage 7.5 V. Test current 20 mA. +-10% tolerance.
2W08G JGDSingle phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800 V.
P4KE91C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V. Bidirectional.
ES1J JGD1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 600 V.
1N4755A JGD1W zener diode. Zener voltage 43V.
SMBJ5914A JGD1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-10% tolerance.
1N752 JGD500mW, silicon zener diode. Zener voltage 5.6 V. Test current 20 mA. +-10% standard tolerance.
S3A JGDSurface mount rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 3.0 A.
FR102L JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 100V.
P4KE27A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V.
SMAJ54CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 54 V. Bidirectional.
3EZ160D2 JGD3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-2% tolerance.
1N961A JGD0.5W, silicon zener diode. Zener voltage 10V. Test current 12.5mA. +-10% tolerance.
1N986B JGD0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-5% tolerance.
SMAJ6.5C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.5 V. Bidirectional.
3EZ16D4 JGD3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-4% tolerance.

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