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24D4 1N5914C P6KE39CA SMAJ14C P4KE10 1N749C SMBJ5920D SF23 SMAJ22C P4KE22 GS1M 1N5921B 1N960A SMBJ85A ZMM55-C47 SMAJ6.0CA ES1C HER101G 3EZ22D4 1N5534C 1N4109 3EZ8.2D5 P6KE9.1 IN5407 SFR205 SMAJ15CA 3EZ36D1 1N988A

JGD Datasheets Catalog-40

Part NoManufacturerApplication
SMBJ5951 JGD1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-20% tolerance.
SMAJ8.0 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V.
3EZ24D4 JGD3 W, silicon zener diode. Nominal voltage 24 V, current 31 mA, +-4% tolerance.
1N5914C JGD1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-2% tolerance.
P6KE39CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V. Bidirectional.
SMAJ14C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. Bidirectional.
P4KE10 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 10 V.
1N749C JGD500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. +-2% tolerance.
SMBJ5920D JGD1.5W silicon surface mount zener diode. Zener voltage 6.2 V. Test current 60.5 mA. +-1% tolerance.
SF23 JGDSuper fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 2.0 A.
SMAJ22C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. Bidirectional.
P4KE22 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V.
GS1M JGD1.0A, surface mount rectifier. Max recurrent peak reverse voltage 1000V.
1N5921B JGD1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-5% tolerance.
1N960A JGD0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-10% tolerance.
SMBJ85A JGDSurface mount transient voltage suppressor. Breakdown voltage 94.4 V (min), 104 V (max). Test current 1.0 mA.
ZMM55-C47 JGDSurface mount zener diode, 500mW. Nominal zener voltage 44-50 V. Test current 2.5 mA. +-5% tolerance.
SMAJ6.0CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V. Bidirectional.
ES1C JGD1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 150 V.
HER101G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V.
3EZ22D4 JGD3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-4% tolerance.
1N5534C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. +-2% tolerance.
1N4109 JGD500mW low noise silicon zener diode. Nominal zener voltage 15V.
3EZ8.2D5 JGD3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-5% tolerance.
P6KE9.1 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V.
IN5407 JGD3.0 A, silicon rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V.
SFR205 JGDSoft fast recovery rectifier. Max recurrent peak reverse voltage 600 V. Max average forward current 2.0 A.
SMAJ15CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. Bidirectional.
3EZ36D1 JGD3 W, silicon zener diode. Nominal voltage 36 V, current 21 mA, +-1% tolerance.
1N988A JGD0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-10% tolerance.

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