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746D P6KE51 P4KE400 DF04S 1N4111D ZMM5239A 1N5946B SFR302 SR204 1N5915A 1N5946D SMBJ5915A 3EZ100D3 SMBJ9.0C SMAJ26C 3EZ15D4 KBP104G P4KE24CA SMAJ85CA P6KE170CA KBPC302G 1N4619C ZMM5260C 3EZ62D10 P4KE110CA 1N5392 P6KE43A 1N5950A

JGD Datasheets Catalog-57

Part NoManufacturerApplication
1N5545B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-5% tolerance.
P4KE62CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 62 V. Bidirectional.
1N4746D JGD1W zener diode. Nominal zener voltage 18V. 1% tolerance.
P6KE51 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V.
P4KE400 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V.
DF04S JGDSingle phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400 V.
1N4111D JGD500mW low noise silicon zener diode. Nominal zener voltage 17V. 1% tolerance.
ZMM5239A JGDSurface mount zener diode. Nominal zener voltage 9.1 V. Test current 20 mA. +-3% tolerance.
1N5946B JGD1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-5% tolerance.
SFR302 JGDSoft fast recovery rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 3.0 A.
SR204 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 2.0 A.
1N5915A JGD1.5 W, silicon zener diode. Zener voltage 3.9V. Test current 96.1 mA. +-10% tolerance.
1N5946D JGD1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-1% tolerance.
SMBJ5915A JGD1.5W silicon surface mount zener diode. Zener voltage 3.9 V. Test current 96.1 mA. +-10% tolerance.
3EZ100D3 JGD3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance.
SMBJ9.0C JGDSurface mount transient voltage suppressor. Breakdown voltage 10.0 V (min), 12.2 V (max). Test current 1.0 mA. Bidirectional.
SMAJ26C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V. Bidirectional.
3EZ15D4 JGD3 W, silicon zener diode. Nominal voltage 15 V, current 50 mA, +-4% tolerance.
KBP104G JGDSingle-phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V.
P4KE24CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 24 V. Bidirectional.
SMAJ85CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 85 V. Bidirectional.
P6KE170CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional.
KBPC302G JGDSingle phase 3.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V.
1N4619C JGD500mW low noise silicon zener diode. Nominal zener voltage 3.0V. 2% tolerance.
ZMM5260C JGDSurface mount zener diode. Nominal zener voltage 43 V. Test current 3 mA. +-10% tolerance.
3EZ62D10 JGD3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-10% tolerance.
P4KE110CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional.
1N5392 JGD1.5 A, silicon rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V.
P6KE43A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 43 V.
1N5950A JGD1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-10% tolerance.

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