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IRG4BC30W-S manual: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4BC30W-S
IRG4BC30W-S manual: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
Manufacturer : IR
Packing : DDPak
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Size : 206 KB
Application : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A