F1040 manual: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1040 Similar

F1040
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1040 Datasheet and F1040 manual

Manufacturer : Polyfet RF

Packing :

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Size : 35 KB

Application : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor