F2021 manual: 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 Similar

F2021
- 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 Datasheet and F2021 manual

Manufacturer : Polyfet RF

Packing :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Size : 40 KB

Application : 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor