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LC801 manual: 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 Similar
- LC801
- 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 Datasheet and LC801 manual
Manufacturer : Polyfet RF
Packing :
Pins : 6
Temperature : Min -65 °C | Max 150 °C
Size : 40 KB
Application : 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 PDF Download