S8201 Similar

  • S8201
    • 4 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • S8202
    • 8 Watt, silicon gate enhancement mode RF power VDMOS transistor

S8201 Datasheet and S8201 manual

Manufacturer : Polyfet RF 

Packing :  

Pins : 8 

Temperature : Min -65 °C | Max 150 °C

Size : 40 KB

Application : 4 Watt, silicon gate enhancement mode RF power VDMOS transistor 

S8201 PDF Download